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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 03

Stable Gallium Arenide Mis Capacitors And Mis Field Effect Transistors By (Nh4)2sx Treatment And Hydrogenation Using Plasma Deposited Silicon Nitride Gate Insulator (Article)
Subject: Compound Semiconductor Devices
Author: K Remashan     
page:      343 - 353
Molecular Beam Epitaxy Growth And Characterization Of Ingap/Ingaas Pseudomorphic High Electron Mobility Transistors(Hemts) Having A Channel Layer Over Critical Layer Thickness (Article)
Subject: Compound Semiconductor Devices , Molecular Beam Epitaxy , Characterization , Ingap-Gaas
Author: S J Jo     
page:      354 - 360
An Mk X Nk Bouwblock Ccd Image Sensor Family Part I: Design (Article)
Subject: Opto.Display Imaging
Author: G Kreider     
page:      361 - 369
An Mk X Nk Bouwblock Ccd Image Sensor Family Part Ii: Characterization (Article)
Subject: Opto.Display Imaging
Author: G Kreider     
page:      370 - 376
Frame Transfer Ccds For Digital Still Cameras: Concept, Design, And Evaluation (Article)
Subject: Opto.Display Imaging
Author: J T Bosiers     
page:      377 - 386
Low-Noise Silicon Avalanche Photodiodes Fabricated In Conventional Cmos Technologies (Article)
Subject: Opto.Display Imaging
Author: A Rochas     
page:      387 - 394
Amorphous Silicon Phototransistors As Nonlinear Optical Device For High Dynamic Range Imagers (Article)
Subject: Opto.Display Imaging
Author: A Nascetti     
page:      395 - 399
High-Frequency Small Signal Ac And Noise Modeling Of Mosfets For Rf Ic Design (Article)
Subject: Silicon Devices
Author: Y Cheng     
page:      400 - 408
Effect Of Forward And Reverse Substrate Biasing On Low-Frequency Noise In Silicon Pmosfets (Article)
Subject: Silicon Devices
Author: M.J. Deen     
page:      409 - 413
Analysis On High-Frequency Characteristics Of Soi Lateral Bjts With Self-Aligned External Base For 2-Ghz Rf Application (Article)
Subject: Silicon Devices
Author: H Nii     
page:      414 - 421
Dynamic Threshold Voltage Damascene Metal Gate Mosfet (Dt-Dmg-Mos) Technology For Very Low Voltage Operation Of Under 0.7 V (Article)
Subject: Silicon Devices
Author: A Yagishita     
page:      422 - 429
The Effects Of Geometrical Scaling On The Frequency Response And Noise Performance Of Sige Hbts (Article)
Subject: Silicon Devices
Author: S Zhang     
page:      429 - 435
A Spacer Patterning Technology For Nanoscale Cmos (Article)
Subject: Silicon Devices
Author: Y. -K Choi     
page:      436 - 441
On The Sio2-Based Gate-Dielectric Scaling Limit For Low-Standby Power Applications In The Context Of A 0.13 Um Cmos Logic Technology (Article)
Subject: Silicon Devices
Author: T. H Huang     
page:      442 - 448
Technological Requirements For A Lateral Sige Hbt Technology Including Theroretical Performance Predictions Relative To Vertical Sige Hbts (Article)
Subject: Silicon Devices
Author: J. Hamelin     
page:      449 - 456
Advanced Model And Analysis Of Series Resistance For Cmos Scaling Into Nanometer Regime Part-Theoretical Derivation (Article)
Subject: Silicon Devices
Author: S D Kim     
page:      457 - 466
Advanced Model And Analysis Of Series Resistance For Cmos Scaling Into Nanometer Regime Part- Ii: Quantitative Analysis (Article)
Subject: Silicon Devices
Author: S D Kim     
page:      467 - 472
Flatband Voltage Shift In Pmos Devices Caused By Carrier Activation In P+ Polycrystalling Silicon And By Boron Penetration (Article)
Subject: Solid-State Device Phenomena
Author: T Aoyama     
page:      473 - 480
A Compact Scattering Model For The Nanoscale Double-Gate Mosfet (Article)
Subject: Solid-State Device Phenomena
Author: A Rahman     
page:      481 - 489
Electron And Hole Mobility In Silicon At Large Operating Temperatures Part-I: Bulk Mobility (Article)
Subject: Solid-State Device Phenomena
Author: S Reggiani     
page:      490 - 499
Impact Of Mosfet Gate Oexide Breakdown On Digital Circuit Operation And Reliability (Article)
Subject: Solid-State Device Phenomena
Author: B Kaczer     
page:      500 - 506
Consistent Model For Short-Channel Nmosfet After Hard Gate Oxide Breakdown (Article)
Subject: Solid-State Device Phenomena
Author: B Kaczer     
page:      507 - 513
A New Model For The Low-Frequency Noise And The Noise Level Variation In Polysilicon Emitter Bjts (Article)
Subject: Solid-State Device Phenomena
Author: M Sanden     
page:      514 - 520
The Effect Of Triple Well Implant Dose On Performance Of Nmos Transistors (Article)
Subject: Performance , Transistor Model
Author: K K Bourdelle     
page:      521 - 523
Diffusion Current And Its Effect On Noise In Submicron Mosfets (Article)
Subject: Diffusion , Mosfets
Author: M S Obrecht     
page:      524 - 525
Photonic High-Frequency Capacitance-Voltage Characterization Of Interface States In Metal-Oxide-Semiconductor (Article)
Subject: Photonic Switching Systems , High Frequency , Capacitance
Author: D Kim     
page:      526 - 528
Improved Hot-Carrier Reliability Of Silicon-On-Insulator Transistors By Deuterium Passivation Of Defects At Oxide/Silicon Interfaces (Article)
Subject: Silicon , Silicon Devices
Author: K. T Cheng     
page:      529 - 531