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Your search returned 27 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 03 |
Stable Gallium Arenide Mis Capacitors And Mis Field Effect Transistors By (Nh4)2sx Treatment And Hydrogenation Using Plasma Deposited Silicon Nitride Gate Insulator
(Article)
Subject:
Compound Semiconductor Devices
Author:
K
Remashan
page:
343
-
353
Molecular Beam Epitaxy Growth And Characterization Of Ingap/Ingaas Pseudomorphic High Electron Mobility Transistors(Hemts) Having A Channel Layer Over Critical Layer Thickness
(Article)
Subject:
Compound Semiconductor Devices
,
Molecular Beam Epitaxy
,
Characterization
,
Ingap-Gaas
Author:
S J
Jo
page:
354
-
360
An Mk X Nk Bouwblock Ccd Image Sensor Family Part I: Design
(Article)
Subject:
Opto.Display Imaging
Author:
G
Kreider
page:
361
-
369
An Mk X Nk Bouwblock Ccd Image Sensor Family Part Ii: Characterization
(Article)
Subject:
Opto.Display Imaging
Author:
G
Kreider
page:
370
-
376
Frame Transfer Ccds For Digital Still Cameras: Concept, Design, And Evaluation
(Article)
Subject:
Opto.Display Imaging
Author:
J T
Bosiers
page:
377
-
386
Low-Noise Silicon Avalanche Photodiodes Fabricated In Conventional Cmos Technologies
(Article)
Subject:
Opto.Display Imaging
Author:
A
Rochas
page:
387
-
394
Amorphous Silicon Phototransistors As Nonlinear Optical Device For High Dynamic Range Imagers
(Article)
Subject:
Opto.Display Imaging
Author:
A
Nascetti
page:
395
-
399
High-Frequency Small Signal Ac And Noise Modeling Of Mosfets For Rf Ic Design
(Article)
Subject:
Silicon Devices
Author:
Y
Cheng
page:
400
-
408
Effect Of Forward And Reverse Substrate Biasing On Low-Frequency Noise In Silicon Pmosfets
(Article)
Subject:
Silicon Devices
Author:
M.J.
Deen
page:
409
-
413
Analysis On High-Frequency Characteristics Of Soi Lateral Bjts With Self-Aligned External Base For 2-Ghz Rf Application
(Article)
Subject:
Silicon Devices
Author:
H
Nii
page:
414
-
421
Dynamic Threshold Voltage Damascene Metal Gate Mosfet (Dt-Dmg-Mos) Technology For Very Low Voltage Operation Of Under 0.7 V
(Article)
Subject:
Silicon Devices
Author:
A
Yagishita
page:
422
-
429
The Effects Of Geometrical Scaling On The Frequency Response And Noise Performance Of Sige Hbts
(Article)
Subject:
Silicon Devices
Author:
S
Zhang
page:
429
-
435
A Spacer Patterning Technology For Nanoscale Cmos
(Article)
Subject:
Silicon Devices
Author:
Y. -K
Choi
page:
436
-
441
On The Sio2-Based Gate-Dielectric Scaling Limit For Low-Standby Power Applications In The Context Of A 0.13 Um Cmos Logic Technology
(Article)
Subject:
Silicon Devices
Author:
T. H
Huang
page:
442
-
448
Technological Requirements For A Lateral Sige Hbt Technology Including Theroretical Performance Predictions Relative To Vertical Sige Hbts
(Article)
Subject:
Silicon Devices
Author:
J.
Hamelin
page:
449
-
456
Advanced Model And Analysis Of Series Resistance For Cmos Scaling Into Nanometer Regime Part-Theoretical Derivation
(Article)
Subject:
Silicon Devices
Author:
S D
Kim
page:
457
-
466
Advanced Model And Analysis Of Series Resistance For Cmos Scaling Into Nanometer Regime Part- Ii: Quantitative Analysis
(Article)
Subject:
Silicon Devices
Author:
S D
Kim
page:
467
-
472
Flatband Voltage Shift In Pmos Devices Caused By Carrier Activation In P+ Polycrystalling Silicon And By Boron Penetration
(Article)
Subject:
Solid-State Device Phenomena
Author:
T
Aoyama
page:
473
-
480
A Compact Scattering Model For The Nanoscale Double-Gate Mosfet
(Article)
Subject:
Solid-State Device Phenomena
Author:
A
Rahman
page:
481
-
489
Electron And Hole Mobility In Silicon At Large Operating Temperatures Part-I: Bulk Mobility
(Article)
Subject:
Solid-State Device Phenomena
Author:
S
Reggiani
page:
490
-
499
Impact Of Mosfet Gate Oexide Breakdown On Digital Circuit Operation And Reliability
(Article)
Subject:
Solid-State Device Phenomena
Author:
B
Kaczer
page:
500
-
506
Consistent Model For Short-Channel Nmosfet After Hard Gate Oxide Breakdown
(Article)
Subject:
Solid-State Device Phenomena
Author:
B
Kaczer
page:
507
-
513
A New Model For The Low-Frequency Noise And The Noise Level Variation In Polysilicon Emitter Bjts
(Article)
Subject:
Solid-State Device Phenomena
Author:
M
Sanden
page:
514
-
520
The Effect Of Triple Well Implant Dose On Performance Of Nmos Transistors
(Article)
Subject:
Performance
,
Transistor Model
Author:
K K
Bourdelle
page:
521
-
523
Diffusion Current And Its Effect On Noise In Submicron Mosfets
(Article)
Subject:
Diffusion
,
Mosfets
Author:
M S
Obrecht
page:
524
-
525
Photonic High-Frequency Capacitance-Voltage Characterization Of Interface States In Metal-Oxide-Semiconductor
(Article)
Subject:
Photonic Switching Systems
,
High Frequency
,
Capacitance
Author:
D
Kim
page:
526
-
528
Improved Hot-Carrier Reliability Of Silicon-On-Insulator Transistors By Deuterium Passivation Of Defects At Oxide/Silicon Interfaces
(Article)
Subject:
Silicon
,
Silicon Devices
Author:
K. T
Cheng
page:
529
-
531
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